Vertical field-effect transistor based on wave-function extension

A. Sciambi,1,2 M. Pelliccione,1,2 M. P. Lilly,3 S. R. Bank,4,5 A. C. Gossard,4 L. N. Pfeiffer,6 K. W. West,6 and D. Goldhaber-Gordon2,7,* 1Department of Applied Physics, Stanford University, Stanford, California 94305-4045, USA 2SIMES, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA 3Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA 4Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA 5Electrical and Computer Engineering Department, University of Texas at Austin, Austin, Texas 78758, USA 6Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA 7Department of Physics, Stanford University, Stanford, California 94305-4045, USA (Received 19 January 2011; revised manuscript received 21 July 2011; published 18 August 2011)